Investigation of electron cyclotron resonance plasma-assisted atomic layer deposition Al2O3 thin fil

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：eclipse

【摘要】

：

【作者】

：

Lijun Sang Qiang Chen Xingcun Li Lizhen Yang Zhongwei Liu

【机构】

：

Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Beijing, Chi

【出处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

ECR plasma atomic layer deposition aluminum oxide

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Without extra-heating,Al2O3 thin films were deposited on hydrogen-terminated Si substrate etched in hydrofluoric acid by a home-made electron cyclotron resonance (ECR) plasma-assisted atomic layer deposition (ALD) with trimethylaluminum (TMA) and oxygen gas used as precursor and oxidant,respectively.

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Investigation of electron cyclotron resonance plasma-assisted atomic layer deposition Al2O3 thin fil

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