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  5. Structural Evolution of Microcrystalline Ge-rich Si1-xGex Films Deposited by Jet-ICPCVD in Annealing

Structural Evolution of Microcrystalline Ge-rich Si1-xGex Films Deposited by Jet-ICPCVD in Annealing

来源 :The 6th International Conference on Nanoscience and Technolo | 被引量 : 0次 | 上传用户：xiao2168644
【摘 要】
：
　　Ge-rich Si1-xGex films with a hybrid amorphous/nanocrystalline structure were deposited by jet-type inductively coupled plasma chemical-vapor deposition(jet
【作 者】
：
YuWang[1]MengYang[1]GangWang[1]XiaoxuWei[2]JunzhuanWang[2]YunLi[2]ZewenZou[3]YoudouZheng[2]YiShi[2] 
【机 构】
：
Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and En
【出 处】
：
The 6th International Conference on Nanoscience and Technolo
【发表日期】
：
2015年期
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论文部分内容阅读
　　Ge-rich Si1-xGex films with a hybrid amorphous/nanocrystalline structure were deposited by jet-type inductively coupled plasma chemical-vapor deposition(jet-ICPCVD)[1].The structural evolution of the deposited films after annealing at various temperatures(Ta)was investigated.Experimental results show that the as-deposited film is hybrid-structured with amorphous and clusters.As arising Ta continually,a transformation from clusters to small SiGe NCs and finally to composite NCs with Ge core and SiGe shell is revealed.
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