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现代光电器件不仅要求有较高的平面度、样品平行度以及厚度,还要求有低损伤、高质量的加工表面。为了达到这个目的,对不同条件下的研磨速率及所产生的损伤层进行研究,并制定合理的研磨工序是必需的。叙述了研磨的本质及损伤层的产生,研究了晶片减薄过程中去除速率和表面粗糙度与研磨转速和研磨压力的关系,比较了不同磨料颗粒度对去除速率和表面粗糙度的影响,为制定合理的研磨工序提供了依据。
Modern optoelectronic devices not only require higher flatness, parallelism and thickness of the sample, but also require low-damage, high-quality machined surfaces. In order to achieve this objective, it is necessary to study the grinding rate and the damaged layer produced under different conditions and to develop a reasonable grinding process. The nature of grinding and the generation of damaged layer are described. The relationship between removal rate and surface roughness and grinding speed and grinding pressure during wafer thinning is studied. The effect of different abrasive particle size on removal rate and surface roughness is compared Formulation of a reasonable grinding process provided the basis.