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5. Carrier Charging Effect of V3Si Nanocrystals in Floating Gate Memory Structure

Carrier Charging Effect of V3Si Nanocrystals in Floating Gate Memory Structure

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：lhk4444

【摘 要】

：

Nanocrystal memory device has been proposed to make breakthrough for high integrated nonvolatile memory device,because the nanocrystals embedded in dielectric layers were created the quantum well to c

【作 者】

：

Dongwook Kim Dong Uk Lee Hyo Jun Lee Eun Kyu Kim 

【机 构】

：

Quantum-Function Research Lab. and Department of Physics, Hanyang University, Seoul 133-791, Korea

【出 处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

Memory Vanadium silicide Carrier Transport 

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论文部分内容阅读

Nanocrystal memory device has been proposed to make breakthrough for high integrated nonvolatile memory device,because the nanocrystals embedded in dielectric layers were created the quantum well to confine the electrons by the differences of work function between the nanocrystal and the dielectric layer.

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