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The dream of epitaxially integrating Ⅲ-Nitride semiconductors on silicon is being fulfilled through the R&D effort of academia and industry, which is driven by the great potential of GaN-on-Silicon technology in improving the efficiency yet at a much reduced cost for solid state lighting and power electronics.This epitaxial integration was hindered by two major technological challenges.The large lattice mismatch between GaN and Si (~17%) often causes a high density of dislocation defects, and the huge misfit in the coefficient of thermal expansion(~54%) results in crack network formation in the GaN epitaxial film.