Weakly magnetized inductively coupled plasma source for 450 mm wafer processing

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：tsg40

【摘要】

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【作者】

：

Ho-Jun Lee Yun-Gi Kim

【机构】

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School of Electrical Engineering, Pusan National University, Busan 609-736, Korea

【出处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

Plasma Source Etching 450 mm Wafer

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Characteristics of weakly magnetized inductively coupled plasma (MICP),a plasma source utilizing cavity mode of low frequency branch of right hand circularly polarized wave,are investigated using self-consistent simulation based on the drift-diffusion approximation with anisotropic transport coefficient.

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Weakly magnetized inductively coupled plasma source for 450 mm wafer processing

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