Graphene on gallium nitride(GaN)is a challenge when we want to keep high quality of GaN epi-layers at temperature higher than 900℃.Thanks for the using of C2H2 as carbon source,we success for it.We demonstrate that graphene can be growth on both copper and direct GaN epi-layers.Raman spectra indicate that the graphene films are about 4–5 layers in thickness.Meanwhile,the effects of growth temperatures on the growth of graphene films are systematically studied,of which 830℃ is found to be the optimum growth temperature.The sheet resistance of the grown graphene can be reduced by ammonia gas doped when growing.We successful grow the graphene films directly on gallium nitride for high quality.