反应溅射ZnFe2O4外延薄膜的磁电阻特性研究

来源 :中国物理学会2013年秋季学术会议 | 被引量 : 0次 | 上传用户：PLMM1986

【摘要】

：

块体ZnFe2O4 为反铁磁绝缘材料,奈尔温度10 K,限制了其在自旋电子学领域的应用[1]。然而,在二维薄膜材料中,由于阳离子的无序占位等可以使尖晶石铁氧体表现出与块体不同的性质。此外,通过控制尖晶石铁氧体的生长条件,调节薄膜中的氧空位密度,可以在很大范围内对其电阻率进行调控。

【作者】

：

金朝丁时浩白海力

【机构】

：

天津大学理学院,天津市低维功能材料物理与制备技术重点实验室,天津,300072

【出处】

：

中国物理学会2013年秋季学术会议

【发表日期】

：

2013年11期

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反应溅射ZnFe2O4外延薄膜的磁电阻特性研究

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