有机晶体液相制备及其在场效应晶体管中的应用

来源 :2016第二届有机光电材料与器件国际会议 | 被引量 : 0次 | 上传用户:chenhaun0702
下载到本地 , 更方便阅读
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
  有机场效应晶体管具有易于加工、低成本和柔性等优点,受到广泛关注.溶液相方法因其简单、快速,成为制备高性能的有机晶体的重要途径.为了实现有机晶体生长,利用液相笔写法可以快速得到有机多晶,晶界达到数百微米,基于此晶体的器件性能达到0.7 cm2/Vs[1].
其他文献
Phenalene is the smallest D3h-symmetric polycyclic aromatic hydrocarbon(PAH)with 13 carbon atoms and 13 π electrons.Thus,one electron remains unpaired,rendering this PAH with an open-shell character.M
As a core member in organic electronics family,nonvolatile memories based on organic thin film transistors have attracted wide attention,due to the merits of nondestructive reading process,integration
低成本、高效率、长寿命是有机电致发光器件(Organic light-emitting device,OLED)广泛应用的关键。叠层OLED(Tandem OLED)是将多个发光单元通过载流子产生层(ChargeGeneration Layer,CGL)串联起来,在同一电流驱动下,实现器件亮度和效率的倍增。为了获得高效、稳定的叠层OLED 器件,载流子产生层是叠层OLED 的关键组成部分,它肩负着
Lead halide perovskites have achieved phenomenal successes in photovoltaics,due to their suitable bandgaps,long diffusion lengths and balanced charge transport.However,the extreme susceptibility of pe
Although formamidinium lead iodide(FAPbI3)perovskite has shown great promise in the field of perovskite-based optoelectronic devices,it suffers the complications of a structural phase transition from
Silicon/organic heterojunction solar cells(HSCs)made of crystalline silicon as absorber and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS)as holeselective conducting layers emerges
Formation of bulk heterojunctions by incorporating colloidal quantum dots(QDs)into a mesoporous substrate is anticipated to yield efficient charge collection and complete light absorption.However,it i
Non-ion additive hole-transporting material(HTM)of hydrophobic oligothiophene derivative named DR3TBDTT and triphenylamine derivative of N,N′-di(3-methylphenyl)-N,Ndiphenyl-4,4-diaminobiphenyl(TPD)wer
In 1980s,electric-double-layer effects are observed in ionic liquid and ionic gel electrolyte,which provides an additional method for designing new conceptional devices.In electrolyte gated transistor
Surface modification is a practical approach to reduce carrier recombination at the surface and subsurface of the perovskite films caused by the trap states and the intrinsic nature of polycrystalline