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Thin films of undoped and Sb doped SnO2 were deposited on quartz by sol-gel dip coating technique.The structure,optical,and electrical properties of thin films have been studied as a function of Sb doping concentration.The analysis of XRD patterns showed a tetragonal rutile structure of ATO films and the crystalline size of the films decreased with increasing dopant concentration.The SEM results showed that the morphology of films depend on the doping concentration intensively.A minimum resistivity of 6.72×10-3 Ω·cm was obtained for the ATO films(10mol%).The hall mobility of the films decreased with increasing the Sb concentration.The optical study revealed that the energy band gap gradually increased from 3.65eV to 3.743eV.