Photoluminescence,Electron-Phonon Coupling,ZnO

来源 :2015台湾物理年会 | 被引量 : 0次 | 上传用户：newcat

【摘要】

：

　　Zinc oxide(ZnO)is a polar semiconductor having a wide direct bandgap Eg=3.37eV at roomtemperature.The exciton binding energy as high as 60meV and strong ele

【作者】

：

洪聖傑[1]何易恒[1]謝至中[1]盧芝佑[1]趙君棟[1]黃玉林[2]

【机构】

：

物理系應用物理碩士班,國立東華大學,花蓮縣壽豐鄉,Taiwan

【出处】

：

2015台湾物理年会

【发表日期】

：

2015年期

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　　Zinc oxide(ZnO)is a polar semiconductor having a wide direct bandgap Eg=3.37eV at roomtemperature.The exciton binding energy as high as 60meV and strong electron-phononinteraction lead to advantageous optical and optoelectronic properties,making ZnO a highlyattractive candidate material fo r developing novel photonic devices.

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Photoluminescence,Electron-Phonon Coupling,ZnO

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