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5. Quickly growth amorphous silicon films using an inductively coupled RF-PECVD source

Quickly growth amorphous silicon films using an inductively coupled RF-PECVD source

来源 :2011年材料表面与界面国际大会 | 被引量 : 0次 | 上传用户：superdog22

【作 者】

：

Sheng Songke Zhang Guifeng Sun Xiaofei Hou X 

【机 构】

：

Dalian University of Technology, Key Laboratory of Materials Modification by Laser, Ion and Electron

【出 处】

：

2011年材料表面与界面国际大会

【发表日期】

：

2011年9期

【关键词】

：

ICP source hydrogenated amorphous silicon deposition rate negative biased voltag 

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