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Atomic layer deposition (ALD) is a rapidly developing thin film deposition technique based on a sequential surface saturated chemical reaction.Due to the self-limiting nature of surface reactions,each ALD cycle forms one or less single atomic layer on the substrate.This enables sub-nanometer thickness control and outstanding conformality over large areas.Monitoring the thin film growth in the early stage during atomic layer deposition is of great importance to study the fundamental nucleation and growth mechanism,and several physical properties of ultra-thin film.