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在太赫兹焦平面成像等系统中,Ga As肖特基二极管作为太赫兹检测的核心器件,其噪声特性直接影响太赫兹探测系统的灵敏度。讨论了Ga As肖特基二极管在不同直流偏压下加载给负载的热噪声电压、散粒噪声电压、总噪声电压,并给出了相应的解析解。同时,建模模拟了太赫兹混频前端,并利用谐波平衡法对理论公式进行了对比验证。对太赫兹像元与阵列芯片的噪声机理以及提高芯片的噪声性能研究,改善芯片噪声特性,从而提高太赫兹焦平面成像系统灵敏度具有重要意义和作用。
In terahertz focal plane imaging system, Ga As Schottky diode as the core of terahertz detection device, the noise characteristics directly affect the sensitivity of terahertz detection system. The thermal noise voltage, shot noise voltage and total noise voltage of Ga As Schottky diode under different DC bias voltages are discussed, and the corresponding analytical solutions are given. At the same time, the modeling of the terahertz mixing front-end, and the use of harmonic balance method to verify the theoretical formula. It is significant to study the noise mechanism of terahertz pixels and array chips, improve the noise performance of the chip, improve the chip noise characteristics and improve the sensitivity of terahertz focal plane imaging system.