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目的探讨半导体激光对口腔黏膜溃疡组织中一氧化氮(NO)及一氧化氮合酶(NOS)含量的影响。方法健康新西兰大白兔20只,随机分为正常空白对照组10只,实验组10只建立口腔黏膜溃疡动物模型。其中实验组每只兔一侧溃疡半导体激光连续照射3 d,激光波长650 nm,功率200 mW,光斑直径7.5 mm,时间1 min(激光组);一侧溃疡不做处理(对照组)。末次治疗24 h后处死各组大白兔,采用分光光度仪测定NOS的含量,硝酸还原酶法测定NO的量。结果溃疡激光组较溃疡对照组NO、NOS活性含量显著降低(P<0.05);溃疡激光组与正常对照组NO、NOS活性含量没有显著性差异(P>0.05)。结论半导体激光照射口腔黏膜溃疡能有效降低组织中NO、NOS活性含量,起到治疗口腔黏膜溃疡的作用。
Objective To investigate the effect of semiconductor laser on nitric oxide (NO) and nitric oxide synthase (NOS) in oral mucosa ulcer tissue. Methods Twenty healthy New Zealand white rabbits were randomly divided into 10 normal blank control groups and 10 experimental animal models of oral mucosal ulcer. The experimental group of rabbit ulcers on each side of the rabbit semiconductor laser irradiation for 3 consecutive days, the laser wavelength 650 nm, power 200 mW, spot diameter 7.5 mm, time 1 min (laser group); side ulcers not treated (control group). The rabbits in each group were sacrificed 24 h after the last treatment, the content of NOS was determined by spectrophotometer, and the amount of NO was determined by nitrate reductase method. Results The content of NO and NOS in ulcer laser group was significantly lower than that in ulcer control group (P <0.05). There was no significant difference in the content of NO and NOS in ulcer laser group and normal control group (P> 0.05). Conclusion Laser irradiation of oral mucosal ulcer can effectively reduce the content of NO and NOS in tissues and play an important role in the treatment of oral ulcer.