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用苯作气源，采用电子回旋共振等离子体增强化学气相沉积方法制备了非晶含氢碳膜，并在该系统上用氧等离子体对这些碳膜进行了刻蚀性能的研究．实验中，测量了碳膜在不同氧压强、流量和微波功率下的刻蚀速率，研究了膜的沉积速率与它的刻蚀速率之间的关系．结果表明，膜的刻蚀速率与膜的生长条件密切相关；在低沉积速率下生长的非晶碳膜的刻蚀率低于常用的 Ｎｏｖｏｌａｋ 光刻胶．这种碳膜具有较强的耐刻蚀性能，可以用作微电子器件制造中的掩膜材料．
An amorphous hydrogen-containing carbon film was prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition using benzene as a gas source, and the etching performance of the carbon films was studied by oxygen plasma on the system. In the experiment, the etching rate of carbon film under different oxygen pressure, flow rate and microwave power was measured. The relationship between the film deposition rate and its etching rate was studied. The results show that the etching rate of the film is closely related to the growth conditions of the film. The etching rate of the amorphous carbon film grown at the low deposition rate is lower than that of the commonly used Novolak photoresist. This carbon film has a strong resistance to etching, can be used as a mask material in the manufacture of microelectronic devices.