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采用一种新型的刻蚀气体——ＨＢｒ＋Ｈｅ作为反应离子刻蚀气体，用ＳｉＯ２作为刻硅槽的掩膜，在８～１３Ω·ｃｍＰ型（１００）硅片上，刻出槽宽１．２μｍ，槽深０．８μｍ的硅深槽，并对ＨＢｒ反应离子刻蚀硅的高度各向异性以及刻蚀过程中产生的“宽度”效应和“黑硅”现象进行了分析．
A new type of etching gas, HBr + He, was used as a reactive ion etching gas and SiO2 was used as a mask to etch silicon grooves. The groove width was 1.2 μm on an 8 ~ 13 Ω · cm P type (100) Depth of 0.8μm silicon deep groove, and the high degree of anisotropy HBr reactive ion etching of silicon etching and the resulting “width” effect and the “black silicon” phenomenon was analyzed.