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用精确的和多种近似的MOSFEI电流特性公式处理同一试样上测得的输出特性的转移特性,结果表明用近似公式I_(Dsat)=Z/L/2μ_(?)C_(8x)(V_G-V_r)~2算出的迁移率值比精确公式算得的伍小了30％左右,这种有效迁移率的减小是因为推导电流公式时忽略了衬底体电荷。处理线性区数据求迁移率的公式μ_(?)=gm/Z/LC_(cx)V_D可由精确公式直接导出,因此用这一公式算出的迁移率值与精确公式算得的值同样正确。
The transfer characteristics of the output characteristics measured on the same sample were processed using the exact and various approximations of the MOSFEI current characteristics and the results showed that the transfer characteristics measured with the approximate formula I_ (Dsat) = Z / L / 2μ_ (C) (8x) (V_G -V_r) ~ 2 is about 30% smaller than that of the exact formula. The reduction of effective mobility is because the substrate body charge is neglected when deriving the current formula. Μ_ (?) = Gm / Z / LC_ (cx) V_D can be derived directly from the exact formula, so the mobility calculated using this formula is exactly the same as the exact formula.