【摘 要】
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A novel topology low-voltage high precision current reference based on subthreshold Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) is presented. T
【机 构】
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Department of Electronic Science & Technology
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A novel topology low-voltage high precision current reference based on subthreshold Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) is presented. The circuit achieves a temperature-independent reference current by a proper combination current of two first-order temperature-compensation current References , which exploit the temperature characteristics of integrated poly2 resistors and the Ⅰ- Ⅴ transconductance characteristics of MOSFET operating in the subthreshold region. The circuit, designed with the 1st silicon 0.35 μm standard CMOS logic process technology, exhibits a stable current of about 2.25 μA with much low temperature coefficient of 3 ×10-4 μA/℃ in the temperature range of -40～150 ℃ at 1 V supply voltage, and also achieves a better power supply rejection ratio (PSRR) over a broad frequency. The PSRR is about -78 dB at DC and remains -42dB at the frequency higher than 10 MHz. The maximal process error is about 6.7% based on the Monte Carlo simulation. So it has good process compatibility.
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