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利用双离子束沉积系统沉积了HfTaO薄膜,并研究了退火对HfTaO薄膜的结构和电学性质的影响.将HfTaO薄膜分别在900℃和1 000℃下进行真空退火.利用SEM,EDXS,XPS,XRD和AFM对退火前后HfTaO薄膜的成分和结构进行分析;并对退火前后的电学特性C-V,G-V和I-V进行研究.高温退火后发现:由于Ta的掺入,HfTaO薄膜的结晶温度提高1 000℃左右.退火后HfTaO薄膜虽然积累区电容有所减小,但是薄膜的氧化层固定电荷Qf,氧化层陷阱电荷Qot和界面缺陷电荷密度Dit(Hill-Coleman方法得到)都有所减小;此外薄膜的漏电流在退火后也相应的减小.
HfTaO thin films were deposited by dual ion beam deposition system and the effect of annealing on the structure and electrical properties of HfTaO thin films was studied.The HfTaO films were vacuum annealed at 900 ℃ and 1 000 ℃ respectively.Using SEM, EDXS, XPS, XRD And AFM were used to analyze the composition and structure of HfTaO films before and after annealing. The electrical properties of CV, GV and IV before and after annealing were also investigated.After annealing at high temperature, the crystallization temperature of HfTaO films increased about 1 000 ℃ due to the incorporation of Ta After annealing, the HfTaO thin film shows a decrease in the capacitance of the accumulated region, but the fixed charge Qf of the oxide layer, the charge Qot of the oxide layer and the Dit of the interface defect (obtained by the Hill-Coleman method) Leakage current also decreases after annealing.