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提出了一种新结构Si1-xGex/Si光电探测器─—能隙阶梯缓变结构的Si1-xGex/SiPIN型近红外光电探测器。理论分析表明 ,能隙缓变增大了载流子的离化率 ,价带的不连续则有利于空穴离化 ,从而对载流子的收集有利 ,可获得高的光电响应。实验结果表明 ,该探测器具有良好的I V特性 ,反向漏电低达 0 1μA/mm2 (- 2V)。该探测器主峰值波长在 0 96 μm。其光电流响应随着反向偏压的增加有明显的增大 ,在同等条件下其光电流响应约为商用Si PIN探测器的 15倍。
A Si1-xGex / SiPIN near-infrared photodetector with a new structure Si1-xGex / Si photodetector ─gap-gap step-change structure was proposed. The theoretical analysis shows that the slow bandgap increases the ionization rate of carriers, and the valence band discontinuities are favorable to the hole ionization, which will benefit the collection of carriers and achieve high photoelectric response. Experimental results show that the detector has a good I V characteristic with reverse leakage as low as 0 1 μA / mm2 (-2V). The main peak wavelength of this detector is 0 96 μm. The photocurrent response increases obviously with the increase of the reverse bias voltage. Under the same conditions, the photocurrent response is about 15 times that of commercial Si PIN detector.