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报道用SiF4 和H2 的间接微波等离子体化学气相沉积方法低温生长多晶硅 (poly Si)薄膜 .实验发现 ,等离子体中的离子、荷电集团对薄膜生长表面的轰击是影响薄膜结晶质量的重要因素之一 .通过外加偏压抑制这些荷电粒子的动能是控制表面生长反应、制备高质量 ploy Si薄膜的有效方法 .在合适的外加偏压下制备的poly Si薄膜 ,氢含量仅约为 0 9at% ,中心位于 5 2 0cm-1的Raman特征峰半高宽约为 4 4cm-1
It is reported that polySi film is grown by indirect microwave plasma chemical vapor deposition (CVD) with SiF4 and H2 at low temperature. It was found that plasma and ion group bombardment of the film growth surface is an important factor affecting the crystalline quality of the film The inhibition of the kinetic energy of these charged particles by external bias is an effective method to control the surface growth reaction and produce the high quality ploy Si films.The poly Si thin films prepared under suitable external bias have the hydrogen content of only about 0 9 at% , The Raman characteristic peak centered at 520 cm-1 has a full width at half maximum of 4 4 cm -1