本文研究了一个采用标准0.35μm CMOS工艺制造的新型高能物理粒子轨迹追踪器.这个新型的追踪器运用CMOS有源像素传感器技术(CMOS Monolithic Active Pixel Sensors,MAPS)将信号的探测与处理电路集成在一起,在像素的内部实现了相关双次采样操作(Correlated Doubled Sampling,CDS).实验芯片包含一个128行×32列的像素矩阵,其中,像素的大小为25×25μm2.通过采用放射源55Fe的测定,得到像素的等效输入随机噪声(Temporal Noise)仅为12个电子而固定噪声(Fixed Pattern Noise,FPN)仅为4个电子.传感器的电荷-电压转换系数(Charge-to-Voltageconversion Factor,CVF)为60μV/e-.测试中,芯片的信号读取速度达到了12μs/帧. In this paper, we investigate a new high-energy physical particle track-tracker fabricated in a standard 0.35μm CMOS process.The new tracker uses CMOS Monolithic Active Pixel Sensors (MAPS) to integrate the signal detection and processing circuitry Together, a Correlated Doubled Sampling (CDS) was implemented inside the pixel.The experimental chip consisted of a matrix of 128 rows by 32 columns with a pixel size of 25 × 25μm2. By using a 55Fe The result shows that the equivalent input pixel noise is only 12 electrons and the fixed pattern noise (FPN) is only 4. The charge-to-voltage conversion factor CVF) of 60μV / e-. In the test, the chip’s signal read speed reached 12μs / frame.