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在分析铝的物理化学特性的基础上,对甚大规模集成电路(ULSI)铝布线化学机械抛光(CMP)机理进行研究,确定采用碱性抛光液。阐述了所选pH值调节剂的特点,探讨了其在化学机械抛光过程中的作用机理,并分析了所选表面活性剂所发挥的提高高低选择比的作用。最后,对所选pH值调节剂和表面活性剂对铝化学机械抛光的影响进行了实验研究。结果表明:pH值在11.0时,去除速率最快,约为390nm/min;表面活性剂的加入对去除速率影响不大,但可以明显改善表面状态,表面粗糙度降至nm级。
Based on the analysis of the physical and chemical characteristics of aluminum, the chemical mechanical polishing (CMP) mechanism of very large scale integrated circuit (ULSI) aluminum wiring was studied, and the basic polishing solution was determined. The characteristics of the selected pH modifiers were expounded. The mechanism of their action in the chemical mechanical polishing process was discussed. The role of the selected surfactants in increasing the selectivity was also analyzed. Finally, the effects of selected pH modifiers and surfactants on aluminum chemical mechanical polishing were experimentally investigated. The results showed that the removal rate was the fastest at pH of 11.0, which was about 390nm / min. The addition of surfactant had little effect on the removal rate, but the surface condition could be obviously improved and the surface roughness decreased to nm.