【摘 要】
：
We observe a strong correlation between the ring oxidation-induced stack faults (OISF) formed in the course of phosphor diffusion and the efficiency of Czochral
【机 构】
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Solar Cell Technology Laboratory, Institute of Electrical Engineering, Chinese Academy of Sciences,
论文部分内容阅读
We observe a strong correlation between the ring oxidation-induced stack faults (OISF) formed in the course of phosphor diffusion and the efficiency of Czochralski-grown silicon solar cells. The main reason for ring-OISF formation and growth in substrate is the silicon oxidation and phosphorus diffusion process induced silicon self-interstitial point defect during POCl3 diffusion. The decreasing of minority carrier diffusion length in crystal silicon solar cell induced by ring-OISF defects is identified to be one of the major causes of efficiency loss.
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