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设计了一种应用于超低频率的低噪声MEMS传感器接口电路。该电路利用斩波技术降低1/f噪声,并利用MOS电容替代模拟无源元件等方法,使之与数字工艺相兼容。采用CSMCCMOS 0.5μm 2P3MCMOS工艺,实现了增益为36dB的读出电路。该电路的等效输入噪声功率谱密度为13μV/(Hz)~1/2,3阶交调失真为-33.6dB。电路的功耗为10mW。
A low noise MEMS sensor interface circuit designed for ultra low frequency is designed. The circuit uses chopper technology to reduce 1 / f noise, and the use of MOS capacitors instead of analog passive components and other methods to make it compatible with the digital process. Using CSMCCMOS 0.5μm 2P3MCMOS process, to achieve a gain of 36dB readout circuit. The equivalent input noise power spectral density of this circuit is 13μV / (Hz) ~ 1/2 and 3rd order intermodulation distortion is -33.6dB. The power consumption of the circuit is 10mW.