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不同条件下,在单晶硅基片上沉积了含氮氟化类金刚石(FN-DLC)薄膜.原子力显微(AFM)形貌显示,掺N后,薄膜变得致密均匀.傅里叶变换吸收红外光谱(FTIR)表明,随着r(r=N2/[N2+CF4+CH4])的增大薄膜中C—H键的逐渐减少,CN和C≡N键含量逐渐增加.X射线光电子能谱(XPS)的C1s和N1s峰拟合结果发现,N掺入导致在薄膜中出现β-C3N4和a-CNx(x=1,2,3)成分.Roman散射谱的G峰向高频方向位移和峰值展宽等证明:随着r的增大,薄膜内sp2键态含量增加.
Under different conditions, a thin film of nitrogen-containing fluorinated diamond (FN-DLC) was deposited on the monocrystalline silicon substrate.The morphology of the AFM showed that the film became dense and uniform after N doping.Fourier transform absorption The results of FTIR showed that the content of CN and C≡N bonds gradually increased with the decrease of C-H bond in the films with the increase of r (r = N2 / [N2 + CF4 + CH4] The results of the fitting of the C1s and N1s peaks of XPS showed that N incorporation resulted in the appearance of β-C3N4 and a-CNx (x = 1, 2, 3) components in the film.The G peak of the Roman scattering spectrum shifted toward the high frequency Displacement and peak broadening prove that the sp2 bond content increases with the increase of r.