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本文通过理论分析和实验研究确定:在卧式反应室中 SiCl_4—H_2还原法生长硅外延层的过程中,硅片上面滞流层厚度一致性差异是导致硅外延层生长厚度一致性差的重要因素。在实验研究中得出了外延生长的一些规律曲线;根据这些曲线对外延生长的工艺条件进行了选择,在改善外延层厚度一致性、防止外延片翘边、提高工艺水平等方面均取得较明显的效果。
In this paper, the theoretical analysis and experimental studies show that during the growth of Si epitaxial layers by SiCl 4 -H 2 reduction in horizontal reaction chamber, the consistency of the thickness of the stagnant layer on the silicon wafer is an important factor in the poor consistency of growth of the silicon epitaxial layer . Some regular curves of epitaxial growth are obtained in the experimental study. According to these curves, the process conditions of epitaxial growth are selected, which are more obvious in improving the consistency of the epitaxial layer thickness, preventing the edge-extension of the epitaxial wafer and improving the technological level Effect.