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The epitaxial growth conditions and performance of a diode-pumped GaSb-based optically pumped semiconductor disk laser (SDL) emitting near 2.0 μm in an exteal cavity configuration are reported.The high quality epitaxial structure,grown on Te-doped (001) oriented GaSb substrate by molecular beam epitaxy,consists of a distributed Bragg reflector (DBR),a multi-quantum-well gain region,and a window layer.An intra-cavity SiC heat spreader was attached to the gain chip for effective thermal management.A continuous-wave output power of over 1 W operating at 2.03 μm wavelength operating near room temperature was achieved using a 3％ output coupler.