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采用离子束增强沉积技术在 10 0 mm硅片上制备大面积均匀 Al N薄膜 ,原子力显微镜 (AFM)显示其表面平整光滑 ,均方根粗糙度 (RMS)为 0 .13nm ,满足直接键合的需要 .同时 ,采用智能剥离技术成功实现了室温下 Al N与注氢硅片的直接键合 ,形成了以 Al N薄膜为埋层的 SOI结构 ,即 Al N上的硅结构 (SOAN) .用扩展电阻、卢瑟福背散射 -沟道、剖面透射电镜等技术分析了所形成的 SOAN结构 .
A large area AlN thin film was prepared on a 100 mm silicon wafer by ion beam enhanced deposition technique. AFM showed that the surface was smooth and the root mean square roughness (RMS) was 0.13 nm, which satisfied the requirement of direct bonding In the meantime, the direct bonding between Al N and hydrogen-injected silicon wafer at room temperature has been successfully achieved by the smart lift-off technique to form the SOI structure with the AlN film as the buried layer, that is, the SOAN structure on AlN. Extended resistance, Rutherford backscattering - channel, section transmission electron microscopy and other techniques to analyze the structure of SOAN.