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设计研制了一种新的低阈值、单模工作的(GaAl)As/GaAs激光器.该激光器结构巧妙地利用了非平面衬底液相外延的性质,所有外延层的生长和电流通路内条的形成均在一次液相外延中完成,制造工艺非常单简.
A new low-threshold, single-mode (GaAl) As / GaAs laser was designed and fabricated.The laser structure cleverly utilizes the properties of liquid-phase epitaxy of non-planar substrates, the growth of all epitaxial layers and the The formation is completed in a liquid phase epitaxy, the manufacturing process is very simple.