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提出了一种基于电子散斑干涉(ESPI)技术的快速评价半导体器件可靠性的新方法。通过给试件施加序进的加速温度应力,采用ESPI技术测量其封装离面位移随温度变化的规律预测其工作寿命。对简单半导体器件样品进行了实验,得到了散斑条纹图随试件温度的变化规律,根据变化规律快速提取出了试件的激活能,推算出了试件常温条件下的工作寿命。实验结果与相关资料数据吻合,验证了本文方法的可行性。
A new method based on Electronic Speckle Pattern Interferometry (ESPI) is proposed to quickly evaluate the reliability of semiconductor devices. By applying accelerating temperature stress to the specimen, ESPI technology was used to measure the displacement of the surface of the specimen as a function of temperature to predict its working life. Experiments on samples of simple semiconductor devices were carried out. The variation of speckle fringe pattern with temperature of specimen was obtained. The activation energy of the specimen was quickly extracted according to the variation law, and the working life under normal temperature was calculated. The experimental results are in good agreement with the relevant data to verify the feasibility of this method.