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“中膜”工艺是一种兼有薄膜技术的高分辨率和厚膜技术成本低(因无需真空设备)等优点的工艺。本文就用于3～12GHz频率范围的微波集成电路的中膜微带传输线的性能给以阐述。对特性阻抗为35、50和71Ω的几个环形谐振器做了一些实验。这些谐振器是用中膜金导体在96％和99.6％的氧化铝衬底上制成的。进行了微带损耗的理论计算,并和使用扫频技术所得的微带衰减测量数据进行了比较。结果表明,中膜微带传输线的衰减与使用同样导体材料的厚膜线的结果基本相同,而且中膜另外还增加两个优点:一个是精细线条的分辨率高(50μm的线宽和间距),另一个是成本低。典型的数据是,在7GHz下在99.6％氧化铝衬底上的50Ω线的衰减常数是0.06dB/cm,而理论上的下限值是0.05dB/cm。另外,已经使用由100Ω厚膜电阻器(EMCA5512)隔离的中膜金微带支路制作出了Wilkinson 3dB同相功率分配器。也发现,中膜导体可以和厚膜电阻器同时使用,而且,正如所预计的,Wilkinson 3dB混合电路的性能为:在中心频率为6GHz、带宽为500MHz的范围内,隔离度大于30dB。
The “mid-film” process is a process that combines the benefits of thin-film technology with high-resolution and thick-film technology at low cost (without requiring vacuum equipment). This article describes the performance of the MMIC transmission line for microwave ICs in the 3 ~ 12GHz frequency range. A few experiments were done on several ring resonators with characteristic impedances of 35, 50 and 71Ω. These resonators are made of medium-gold gold conductors on 96% and 99.6% alumina substrates. The theoretical calculation of the microstrip loss was performed and compared with the microstrip attenuation measurement data obtained using the sweep technique. The results show that the attenuation of the meshed microstrip transmission line is basically the same as that of the thick conductor line using the same conductor material. The middle diaphragm additionally has two advantages: one is that the resolution of the fine line is high (line width and spacing of 50 μm) The other is low cost. Typical data is that the attenuation constant of a 50Ω line on a 99.6% alumina substrate at 7 GHz is 0.06 dB / cm while the theoretical lower limit is 0.05 dB / cm. In addition, Wilkinson 3dB in-phase power dividers have been fabricated using a medium gold microstrip branch isolated from a 100Ω thick film resistor (EMCA5512). The mid-film conductor was also found to work with thick-film resistors and, as expected, the Wilkinson 3dB hybrid’s performance was greater than 30 dB over a center frequency of 6 GHz and a bandwidth of 500 MHz.