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针对取得较好传感器技术而进行的基础研究的一个关键方面是改进红外焦平面阵列用的碲镉汞(HgCdTe)材料。由于HgCdTe包括的红外波长范围很宽,Hg/Cd比率可以改变,工作温度比较适中(可在77K作而不需冷却到10～20K),因此成为改进焦平面阵列所首先要选用的材料。但如同任何新技术一样,总有其“例外”情况。就HgCdTe而言,表面缺陷仍然产生噪声。衬底质量上的缺陷也带来了连续不断的问题。其他问题还有高蒸气压和汞的固有不稳定性及HgCdTe易受高温影响等,使制造时发生问题。
A key aspect of basic research aimed at obtaining better sensor technology is the improvement of HgCdTe materials for infrared focal plane arrays. As HgCdTe includes a wide range of infrared wavelengths, the Hg / Cd ratio can be varied and the operating temperature is moderate (77K for 10 to 20K without cooling), making it the first choice of material for improving the focal plane array. But like any new technology, there are always “exceptions”. In the case of HgCdTe, surface defects still generate noise. Substrate quality defects also brought a continuous problem. Other problems include high vapor pressure and the intrinsic instability of mercury and HgCdTe susceptibility to high temperatures, making problems in manufacturing.