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以ZnO陶瓷靶和金属Cu靶为基础在室温条件下利用直流磁控溅射和射频磁控溅射技术在玻璃衬底上制备了ZnO/Cu多层透明导电薄膜。通过改变溅射金属Cu层的时间等工艺参数,并采用紫外-可见-近红外(UV-Vis-NIR)分光光度计和霍尔测试仪对ZnO/Cu多层结构薄膜的光电性质等进行了分析和研究。ZnO/Cu多层透明导电薄膜的导电性随金属层溅射时间增加有很大的提高,从薄膜的透射谱中发现,Cu层的引入降低了多层结构的可见光透光率。随着多层结构薄膜载流子浓度的增加薄膜的光学带隙Eg下降。
ZnO / Cu multilayer transparent conductive films were prepared on glass substrates by DC magnetron sputtering and RF magnetron sputtering at room temperature on the basis of ZnO ceramic targets and metal Cu targets. The electro-optical properties of the ZnO / Cu multilayered films were investigated by changing the process parameters such as the sputtering time of the Cu layer and the UV-Vis-NIR spectrophotometer and Hall tester analysis and research. The conductivity of ZnO / Cu multilayer transparent conductive films increases greatly with the sputtering time of the metal layers. It is found from the transmission spectra of the films that the introduction of the Cu layer reduces the visible light transmittance of the multilayer structure. The optical bandgap Eg of the film decreases with the increase of the carrier concentration of the multilayer structure film.