本文目的是确定半导体硅吸收系数α与电阻率ρ的关系,并以相应曲线作为校正曲线,用于硅的电阻率、杂质浓度及其分布的测定。我们用10.6μm CO_2激光测量硅样品的透射率T,由公式T=(1-R)~2e~(-αz)/1-R~2e~(-2αz)求得吸收系数α,通过定标曲线α-ρ确定硅单晶的电阻率ρ_0样品两面切成平行平面,研磨后抛光成光学平面。在本实验装置中10.6μm激光束适当地 The purpose of this paper is to determine the relationship between the silicon absorption coefficient α and the resistivity ρ and to use the corresponding curve as a calibration curve for the determination of silicon resistivity, impurity concentration and their distribution. We measured the transmittance T of a silicon sample with a 10.6 μm CO 2 laser and found the absorption coefficient α from the formula T = (1-R) ​​~ 2e ~ (-αz) / 1-R ~ 2e ~ (-2αz) The curve α-ρ determines the resistivity of silicon single crystal ρ_0 The sample is cut into parallel planes on both sides and polished to an optical plane after grinding. In the present experimental apparatus, a 10.6 μm laser beam is suitable