论文部分内容阅读
随着半导体工业的飞速发展,器件的特征尺寸及供电电压不断减小,导致器件发生单粒子效应所需的临界电荷越来越少,单粒子效应的危害越来越严重,新工艺对单粒子效应实验提出了新的挑战。为研究新型器件的单粒子效应,本实验开展了重离子单粒子翻转实验研究。实验采用特征尺寸为65nm,存储器容量为72Mbit(4M×18bit)4倍数据速率SRAM存储器,采用先进CMOS工艺制造,
With the rapid development of the semiconductor industry, the feature size and the supply voltage of the device are continuously reduced, resulting in fewer and fewer critical charges for the single-particle effect of the device. The single-particle effect is more and more damaging. Effect experiment presents new challenges. In order to study the single-particle effect of new devices, this experiment carried out heavy ion single-particle inversion experimental study. Experimental characteristics of the experimental size of 65nm, memory capacity of 72Mbit (4M × 18bit) 4 times the data rate of SRAM memory, using advanced CMOS technology,