本文简述了用α-SiC:H/α-Si:H复合膜钝化硅平面器件的钝化机理,并成功地应用于硅平面小功率晶体管的表面钝化,实验表明,钝化后的器件反向漏电流降低了2～3个数量级;小注入下的电流放大系数提高了3～4倍;室温—200℃的BT实验表明,未钝化的器件200℃时的电流放大系数比室温时增加了300％,而钝化后的器件只增加了75％。这些结果主要归因于钝化膜中原子态氢在到达SiO_2-Si界面处与界面处悬挂键结合,降低了界面态密度。 In this paper, the passivation mechanism of passivation of silicon planar devices with α-SiC: H / α-Si: H composite film is briefly described and successfully applied to the surface passivation of silicon planar low power transistors. Experiments show that after passivation The reverse leakage current of the device is reduced by 2 to 3 orders of magnitude and the current amplification factor under small injection is increased by 3 to 4 times. The BT experiment at room temperature -200 ° C shows that the current amplification factor at 200 ° C of the unpassivated device is higher than that at room temperature When increased by 300%, while after passivation of the device increased by only 75%. These results are mainly attributed to the bonding of the hydrogen atoms in the passive film to the interface of SiO_2-Si at the arrival of SiO_2, which reduces the interface state density.