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w（Cd）1．0％对铜基材料氧化膜的生长具有明显的抑制作用．w（La）0．1％对铜基材料的抗氧化性能的提高也起到积极的促进作用．金刚石的加入急剧加速了铜基材料氧化膜的生长速度．Cu-C-Cd系材料的氧化膜生长规律不遵循抛物线定律，而呈立方规律生长．实际条件下氧化膜的生长规律是复杂的．
1.0% w (Cd) has a significant inhibitory effect on the growth of Cu-based oxide film. w (La) 0.1% of the copper-based material to improve the oxidation resistance also played a positive role in promoting. The addition of diamond sharply accelerated the growth rate of the copper-based oxide film. The growth rules of Cu-C-Cd based oxide films do not obey the law of parabola, but show the regular cubic growth. The actual growth of oxide film under the law is complex.