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现代科学技术的发展、自动化程度的提高、计算机应用的普及,需要越来越多的高速大规模、超大规模集成电路.金属/氧化物/半导体场效应晶体管(MOSFET) 由于其工艺简单、产额高、功耗低、抗干扰能力强、输入阻抗高、易于大规模集成,在大规模集成电路领域内很受人们青睐.尤其是互补型金属/氧化物/半导体场效应晶体管(CMOS)电路,可在单电流下工作,且工作电压范围广、噪声容限大、集成度高.几乎有取代双极型晶体管集成电路的趋势.然而,CMOS电路的速度因受ρ沟MOS中空穴迁移率的限制,不如双极型器件的快,使它的应用受到一定的限制.如能提高它的工作速度,则可使MOS电路具有更强的生命力.
With the development of modern science and technology, the increasing degree of automation and the popularization of computer applications, more and more high-speed large-scale and very large-scale integrated circuits are needed.Metal / oxide / semiconductor field-effect transistors (MOSFETs) High, low power consumption, strong anti-interference ability, high input impedance, easy large-scale integration, very popular in the field of large scale integrated circuits.Especially complementary metal oxide / semiconductor field effect transistor (CMOS) Can operate at a single current with wide operating voltage range, high noise margin, and high integration, almost replacing bipolar transistor ICs. However, the speed of CMOS circuits is limited by the mobility of holes in the p-channel MOS Limit, not as fast bipolar devices, its application is subject to certain restrictions.If it can speed up its work, you can make the MOS circuit has a stronger vitality.