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为了研究单晶硅电火花线切割(WEDM)表面损伤层的损伤形式和形成机理,以电火花线切割加工后的单晶硅表面为研究对象,采用表面形貌观察分析及择优腐蚀方法研究了单晶硅经过电火花线切割后的加工表面。研究结果表明单晶硅经电火花放电加工后表面损伤形式分为4种:热损伤、应力损伤、热与应力综合作用损伤及电解/电化学腐蚀损伤。热损伤使得硅表面形成多晶或非晶硅;应力损伤使硅表面产生裂纹;热与应力综合作用会产生小孔效应,且随着放电功率密度的增加,小孔会明显增多;电解/电化学作用会加快损伤区域及杂质元素富集区域的腐蚀。
In order to study the damage form and formation mechanism of WEDM surface damage layer, the surface of single-crystal silicon after WEDM was taken as the research object, the surface morphology observation and analysis and the preferential etching method were studied Monocrystalline silicon after WEDM processing surface. The results show that the surface morphology of single crystal silicon after EDM is divided into four types: thermal damage, stress damage, thermal and stress combined damage and electrolytic / electrochemical corrosion damage. Thermal damage causes the surface of the silicon to form polycrystalline or amorphous silicon; stress damage causes cracks on the silicon surface; the combined effect of heat and stress has a pinhole effect, and the pinholes increase obviously as the discharge power density increases; the electrolysis / Chemical action will accelerate the erosion of damaged areas and impurity-enriched areas.