论文部分内容阅读
High density nucleation of diamond on mirror-polished Si substrate was realized by near-surface-glow-discharge (NSGD). Nucleation time could be shortened to 3 min and nucleation density reached >1010/cm2. The morphologies of substrate surface were observed with atomic force microscopy after the treatments of negative bias and NSGD, respectively. It was demonstrated that the roughness of substrate surface treated by NSGD was much smoother than that by negative bias. High density of active particles of atomic hydrogen and hydrocarbon spread just above the substrate surface and their supersaturation on the surface were the decisive facto s for high density nucleation of diamond on mirror-polished Si substrate.
High density nucleation of diamond on mirror-polished Si substrate was realized by near-surface-glow-discharge (NSGD). Nucleation time could be shortened to 3 min and nucleation density reached> 1010 / cm2. The morphologies of substrate surface were observed with atomic force microscopy after the treatments of negative bias and NSGD, respectively. It was demonstrated that the roughness of substrate surface treated by NSGD was much smoother than that by negative bias. High density of active particles of atomic hydrogen and hydrocarbon spread just above the substrate surface and their supersaturation on the surface were the decisive facto s for high density nucleation of diamond on mirror-polished Si substrate.