报道了用分于束外延生长出自组装垂直耦合InAs/GaAs大功率量子点激光器(QDLaser)材料和器件。对腔长为 80 0 μm ,室温下和 77K下连续激射阈值电流密度分别为 2 18A/cm2 和 4 9A/cm2 ,波长为 96 0nm ,最大输出功率大于lW。首次报道在0 54W工作下 ,寿命超过 30 0 0小时 ,功率仅下降 0 4 9db ,并制备出实用化的大功率量子点激光器激光耦合模块 ,室温连续激射功率超过 10W Reported the use of sub-bundled epitaxial growth derived from the assembly of vertically-coupled InAs / GaAs high-power quantum dot lasers (QDLaser) materials and devices. For a cavity length of 80 μm, the threshold current densities for continuous lasing at room temperature and 77 K are 2 18 A / cm2 and 4 9A / cm2, respectively. The wavelength is 96 0 nm and the maximum output power is greater than 1 W. For the first time, it was reported that at 0 54W, the life span exceeded 300 hours, the power decreased only by 0 4 9db, and a practical laser coupling module for high power quantum dot laser was prepared. The continuous lasing power at room temperature exceeded 10W