为了进行有效的集成电路（ＩＣ）成品率预报及故障分析，与光刻有关的硅片表面缺陷通常被假定为圆形的或方形的。然而，真实缺陷的形貌是多种多样的。本文提出一种准确的缺陷表征模型。该模型考虑了缺陷的真实轮廓，并且针对短路和开路模式，在引起故障概率相同的意义下将真实缺陷等效为圆形缺陷，实现了硅片表面缺陷的精细表征。 For efficient integrated circuit (IC) yield forecasting and failure analysis, photolithography-related wafer surface defects are generally assumed to be circular or square. However, the real defects are many and varied. This paper presents an accurate model of defect characterization. The model considers the true contour of the defect, and for the short circuit and open circuit mode, the true defect is equivalent to the circular defect under the same cause of the fault probability, which realizes the fine characterization of the surface defects of the silicon wafer.