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锑化铟无接触电位器,是在利用化合物半导体材料锑化铟的磁阻效应基础上,以先进的工艺技术研制成的九十年代初最新高科技产品,是航空航天工业部三院八三五八所的最新高科技成果之一。该产品的主要技术参数如下:
Indium indium antimonide contactless potentiometer is based on the use of indium antimonide compound semiconductor material magnetoresistance effect, based on advanced technology developed into the early nineties the latest high-tech products, aerospace industry is the third hospital eight three One of the latest high-tech achievements in five or eight. The main technical parameters of the product are as follows: