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研究了金属硅化物在电阻薄膜材料中的应用．用真空感应熔炼精密浇铸方法制备含铬和镍的硅化物，作为溅射沉积电阻薄膜的溅射阴极靶材．发现随着硅含量的增加，溅射得到的薄膜电阻值变大，Ｓｉ含量在５０％（质量分数）以上时，溅射阴极靶材的组成由ＣｒＳｉ２，ＮｉＳｉ两相变成Ｓｉ，ＣｒＳｉ２和ＮｉＳｉ２三相．所研制的三种型号的溅射阴极靶材适用于不同电阻值范围的电阻薄膜的溅射沉积，可在金属膜和金属氧化膜电阻器上应用．
The application of metal silicide in resistive thin film materials was studied. Preparation of a silicide containing chromium and nickel using a vacuum induction melting precision casting method as a sputtered cathode target for sputter deposited resistive films. It is found that as the Si content increases, the resistance of the thin film obtained by sputtering becomes larger. When the Si content is above 50 mass%, the composition of the sputtered cathode target changes from the two phases of CrSi2 and NiSi to Si, CrSi2 and NiSi2 Three-phase. The three types of sputtered cathode targets have been developed for sputter deposition of resistive films with different resistance ranges and can be used on metal and metal oxide film resistors.