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RF Micro Devices新推出的氮化镓(GaN)高电子迁移率(HEMT)高功率晶体管系列在UMTS应用中具有67%的峰值漏极效率,在WiMAX应用中具有60%的峰值漏极效率。该系列器件实现了16dB的高增益、在28V时高达4W/mm2的高功率密度以及1000小时的高温度可靠性结果。HEMT晶体管针对UMTS或3G基
RF Micro Devices’ new family of GaN high electron mobility (HEMT) high power transistors offers 67% peak drain efficiency in UMTS applications and 60% peak drain efficiency in WiMAX applications. The devices achieve high gain of 16dB, high power density of up to 4W / mm2 at 28V and high temperature reliability of 1000 hours. HEMT transistor for UMTS or 3G base