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通过对高压液封直拉法单晶生长过程的热传输和影响熔体温度起伏的几个关键因素的分析,研究适合生长(100)晶向磷化铟单晶的热场系统,有效地降低了孪晶产生的几率,重复地生长出了整锭掺硫和掺铁的、直径为50mm和76mm的(100)磷化铟单晶。测试结果表明我们生长(100)磷化铟单晶的热场在生长过程中使晶锭保持较为平坦的固液界面,可稳定地获得具有低的缺陷密度和良好的电学均匀性的高质量磷化铟单晶材料。
The thermal field system suitable for growth of (100) crystal indium phosphide single crystal is studied by analyzing the heat transfer and the key factors influencing the melt temperature fluctuation during the single crystal growth by high-pressure liquid-sealed Czochralski method. The chances of twinning were duplicated, and (100) indium phosphide single crystals 50 mm and 76 mm in diameter were repeatedly grown in a sulfur-doped and iron-doped form. The test results show that the thermal field of (100) indium phosphide single crystal keeps the ingot at a relatively flat solid-liquid interface during growth, stably obtaining high-quality phosphorus with low defect density and good electrical uniformity Indium single crystal material.