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针对传统n-GaAs的Au/AuGe/Ni欧姆接触合金系统的缺点,提出了添加Pt扩散阻挡层的新型欧姆接触合金系统。扫描电子显微镜(SEM)和微束分析(EDS)测试显示,添加Pt扩散阻挡层的合金系统比没有Pt扩散阻挡层的合金系统的表面更加光滑,粗糙度降低。矩形传输模型(RTLM)测试显示,添加Pt阻挡层的比接触电阻率均匀性为85%,最低比接触电阻率为4.25×10-6Ω·cm2;而未添加Pt阻挡层的比接触电阻率均匀性为12%,最低比接触电阻率为3.86×10-6Ω·cm2,表明Pt扩散阻挡层的添加能够增加n-GaAs欧姆接触的重复性和均匀性,提高器件在使用过程中的热稳定性和可靠性。
Aiming at the shortcomings of the conventional n-GaAs Au / AuGe / Ni ohmic contact alloy system, a new ohmic contact alloy system with Pt diffusion barrier is proposed. Scanning electron microscopy (SEM) and micro-beam analysis (EDS) tests showed that the alloy system with Pt diffusion barrier was smoother and the roughness was lower than the alloy system without Pt diffusion barrier. Rectangular transmission model (RTLM) tests showed that the specific resistivity of the added Pt barrier was 85% and the lowest specific resistance was 4.25 × 10-6Ω · cm2, while the resistivity of the non-added Pt barrier was even 12%, the lowest specific resistance is 3.86 × 10-6Ω · cm2, indicating that the addition of Pt diffusion barrier can increase the repeatability and uniformity of n-GaAs ohmic contacts and improve the thermal stability of the device during use And reliability.