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The neodymium ions doped gadolinium vanadate (Nd∶GdVO_4) single crystals were successfully grown by Czochralski method. Chemical etching technique was used to reveal the dislocation structure of the crystals. An average dislocation density of (100) plane is 600 pits/mm 2. The crystal-morphology can be used to determine crystal orientation accurately with simple optical method.
The neodymium ions doped gadolinium vanadate (Nd: GdVO_4) single crystals were successfully grown by Czochralski method. Chemical etching technique was used to reveal the dislocation structure of the crystals. An average dislocation density of (100) plane is 600 pits / mm 2. The crystal-morphology can be used to determine crystal orientation accurately with simple optical method.